 高純度金屬
- 鎵 High Purity > 99.9999% |
|
用於晶圓參雜製程及磊晶, 我們亦可以為客戶提供針對機台需求的各式規格 (ex: 罐狀 or 塊狀…etc.), 其成分請參考附件 |
| |
| Element
|
Result(ppb)
|
Element |
Result(ppb) |
Element |
Result(ppb) |
| Li |
0.2 |
Cr |
0.4 |
In |
1 |
| Be |
0.2 |
Mn |
0.2 |
Sn |
5 |
| B |
0.6 |
Fe |
1.5 |
Sb |
1 |
| Na |
0.3 |
Co |
0.1 |
Te |
1.5 |
| Mg |
0.2 |
Ni |
0.3 |
Ba |
3 |
| Al |
0.3 |
Cu |
1 |
La |
0.5 |
| Si |
1.5 |
Zn |
1.5 |
W |
0.6 |
| P |
0.5 |
Ge |
25 |
Pt |
1 |
| S |
1.8 |
As |
2 |
Au |
5 |
| Cl |
2 |
Se |
6 |
Hg |
5 |
| K |
5 |
Sr |
2 |
Tl |
0.5 |
| Ca |
8 |
Zr |
0.5 |
Pb |
0.8 |
| Sc |
0.06 |
Mo |
0.7 |
Bi |
1 |
| Ti |
0.1 |
Ag |
50 |
Th |
0.1 |
| V |
0.08 |
Cd |
7
|
U |
0.1 |
|
高純度金屬
- 銀 High Purity > 99.99%
 |
| 用於半導體薄膜製程,
我們亦可以為客戶提供針對機台需求的各式規格 (ex: slug or target…etc.), 其成分請參考附件 |
| |
| Element
|
Result(ppm)
|
Element |
Result(ppm) |
Al |
3 |
Mo |
3 |
As |
3 |
Ni |
2.5 |
Bi |
6 |
Pb |
6.5 |
Cd |
3 |
Pd |
10 |
Cr |
3.5 |
Sb |
6 |
Cu |
25 |
Sn |
2.5 |
Fe |
4 |
Zn |
2.5 |
Mn |
4 |
|
|
|
| 高純度金屬
- 鎳 High Purity > 99.995%
|
| 用於半導體薄膜製程,
我們亦可以為客戶提供針對機台需求的各式規格 (ex: slug or target…etc.), 其成分請參考附件 |
| |
| Element
|
Result(ppm)
|
Al |
<10 |
Cr |
<6 |
Cu |
<12 |
Fe |
<11 |
Si |
<2 |
|
| 高純度金屬
- 鋁 High Purity > 99.999%
|
| 用於半導體薄膜製程,
我們亦可以為客戶提供針對機台需求的各式規格 (ex: slug or target…etc.), 其成分請參考附件 |
| |
| Element
|
Result(ppm)
|
Element |
Result(ppm) |
Cu |
<0.5 |
Si |
<0.4 |
Fe |
<0.6 |
Ti |
<0.3 |
Ga |
<0.4 |
V |
<0.6 |
Mg |
<0.6 |
Zn |
<0.6 |
Mn |
<0.3 |
|
|
|
| 高純度金屬
- 鈦 High Purity > 99.995%
|
| 用於半導體薄膜製程,
我們亦可以為客戶提供針對機台需求的各式規格 (ex: slug or target…etc.), 其成分請參考附件 |
| |
Element
|
Result(ppm)
|
Element |
Result(ppm) |
Al |
3.5 |
Nb |
< 2 |
Ca |
<1 |
Ni |
5.4 |
Cd |
<1 |
Si |
4.2 |
Cr |
5.5 |
V |
2.1 |
Fe |
8.7 |
Zr |
5 |
Hg |
< 1 |
|
|
|
| 磷化鎵基板
GaP wafer
|
| 用於生產光電半導體
LED 基板, 請參考簡介規格 |
| |
| Inspection
Certificate on Gallium Phosphide |
| Type |
|
| Dopant |
S |
| Orientation |
(111) +/- 0.5° |
| |
TOP |
BOTTOM |
Carrier
Concentration (1/cm-3) |
3.75 x 1017 |
5.94 x 1017 |
| Hall Mobility (cm2/V.sec.) |
123 |
120 |
| Dislocation Density (1/cm2) |
1.67 x 105 |
1.88 x 105 |
| Diameter |
49.0 ~ 53.0 mm |
|
| Thickness |
285 +/- 15 um |
|
|
| 砷化鎵基板
GaAs wafer |
用於生產光電半導體 LED 基板, 請參考簡介規格
各種不同長晶方式比較表 |
| |
|
VGF |
LEC |
HB |
| Wafer Size |
2"~6" |
3"~6" |
~2.5" |
| Etch Density |
Very low |
High |
Low |
| Residual Strain |
Very low |
High |
Low |
| Carbon Control |
Good |
Good |
- |
| Stoichiometry
/ EL2 Control |
Good |
Moderate |
Poor |
|
| 砷化鎵基板規格表 (Semi-conducting & Semi-Insulating) |
| |
| Semi-conducting
GaAs wafers |
| Parameter |
Unit |
Diameter |
| 2" |
3" |
100mm |
| Growth Method |
|
VGF |
VGF |
VGF |
| Dopant |
|
Si |
Si |
Si |
| Conductivity type |
|
N |
N |
N |
| Carrier Concentration |
/cm3 |
(0.1~4) x 1018 |
(0.1~4) x 1018 |
(0.1~4) x 1018 |
| Resistivity |
Ω-cm |
(15~1) x 10-3 |
(15~1) x 10-3 |
(15~1) x 10-3 |
| Mobility |
cm2/Vs |
(3.5~1.5) x 103 |
(3.5~1.5) x 103 |
(3.5~1.5) x 103 |
| Etch Pit Density |
/cm2 |
<500 |
<500 |
<500 |
| Diameter |
mm |
50.8 +/- 0.5 |
76.2 +/- 0.5 |
100 +/- 0.5 |
| Thickness |
um |
(240~400) +/- 25 |
(300~625) +/- 25 |
625 +/- 25 |
| Orientation |
|
(100) +/- 0.5° |
(100) +/- 0.5° |
(100) +/- 0.5° |
| Off Orientation |
|
Upon
Request |
| Major flat length |
mm |
16 +/- 15 |
22.2 +/- 1.5 |
32 +/- 1.5 |
| Minor flat length |
mm |
7 +/- 1.5 |
11.2 +/- 1.5 |
18 +/- 1.5 |
| TTV |
um |
5 |
5 |
5 |
| TIR |
um |
5 |
5 |
5 |
| Bow |
um |
5 |
5 |
5 |
| Warp |
um |
5 |
5 |
5 |
| Polished surface |
|
P/P,
P/E, As-cut |
| Semi-Insulating
GaAs wafers |
| Parameter |
Unit |
Diameter |
| 2" |
3" |
100mm |
| Growth Method |
|
VGF |
VGF |
VGF |
| Dopant |
|
C or Undoped |
C or Undoped |
C or Undoped |
| Carrier Concentration |
/cm3 |
N/A |
N/A |
N/A |
| Resistivity |
Ω-cm |
>1 x 107 |
>1 x 107 |
>1 x 107 |
| Mobility |
cm2/Vs |
>6000 |
>6000 |
>6000 |
| Etch Pit Density |
/cm2 |
<5000 |
<5000 |
<5000 |
| Diameter |
mm |
50.8 +/- 0.5 |
76.2 +/- 0.5 |
100 +/- 0.5 |
| Thickness |
um |
(300~450) +/- 25 |
(350~625) +/- 25 |
625 +/- 25 |
| Orientation |
|
(100) +/- 0.5° |
(100) +/- 0.5° |
(100) +/- 0.5° |
| Off Orientation |
|
Upon
Request |
| Major flat length |
mm |
16 +/- 15 |
22.2 +/- 1.5 |
32 +/- 1.5 |
| Minor flat length |
mm |
7 +/- 1.5 |
11.2 +/- 1.5 |
18 +/- 1.5 |
| TTV |
um |
3 |
4 |
4 |
| TIR |
um |
3 |
4 |
4 |
| Bow |
um |
2 |
3 |
3 |
| Warp |
um |
4 |
3 |
3 |
| Polished surface |
|
P/P,
P/E, As-cut |
|
| 氧化鋁
(藍寶石) 基板 Al2O3 wafer
|
| |
| Material |
Al2O3 |
| Diameter |
50.8 +/- 0.25 mm |
| Thickness |
330 +/- 25 um |
| 430 +/- 25 um |
| Orientation |
C-axis (0001) +/- 0.3° |
| Orientation Flat |
A-axis (1120) +/- 0.5° |
| Surface |
Epi-Ready Polished |
| TTV |
< 10 um |
| BOW |
10 um |
|
| 金線
Bonding Wire
|
| 用於
IC 晶片封裝 及 腳架連接金線, 我們針對客戶的使用要求提供各種規格, 請參考目錄 |
| |
|
DIA |
Property at Room Temp |
Property at High Temp |
| MIL |
um |
Breaking Load(gr) |
Elongation(%) |
Breaking Load(gr) |
Elongation(%) |
| 0.8 |
20.0 |
4.0~8.0 |
2.0~6.0 |
2 Min |
0.5 Min |
| 6.0~10.0 |
2.0~7.0 |
4 Min |
0.5 Min |
| 6.0~10.0 |
3.0~7.0 |
4 Min |
0.5 Min |
| 7.0~11.0 |
2.0~7.0 |
5 Min |
0.5 Min |
| 6.0~10.0 |
3.0~7.0 |
5 Min |
0.5 Min |
| 6.0~10.0 |
3.0~7.0 |
5 Min |
0.5 Min |
| 0.9 |
23.0 |
5.0~10.0 |
2.0~6.0 |
3 Min |
0.5 Min |
| 7.0~11.0 |
3.0~7.0 |
5 Min |
0.5 Min |
| 7.0~11.0 |
3.0~7.0 |
5 Min |
0.5 Min |
| 7.0~12.0 |
2.0~7.0 |
6 Min |
0.5 Min |
| 8.0~11.0 |
3.0~7.0 |
6 Min |
0.5 Min |
| 8.0~11.0 |
3.0~7.0 |
6 Min |
0.5 Min |
| 1.0 |
25.0 |
8.0~12.0 |
2.0~6.0 |
4 Min |
0.5 Min |
| 9.0~13.0 |
3.0~8.0 |
6 Min |
0.5 Min |
| 9.0~13.0 |
3.0~8.0 |
6 Min |
0.5 Min |
| 10.0~15.0 |
3.0~8.0 |
8 Min |
0.5 Min |
| 10.0~14.0 |
3.0~8.0 |
8 Min |
0.5 Min |
| 10.0~14.0 |
3.0~8.0 |
8 Min |
0.5 Min |
| 1.2 |
30.0 |
12.0~16.0 |
3.0~8.0 |
6 Min |
0.5 Min |
| 14.0~18.0 |
4.0~10.0 |
8 Min |
0.5 Min |
| 14.0~18.0 |
4.0~10.0 |
8 Min |
0.5 Min |
| 15.0~19.0 |
3.0~9.0 |
13 Min |
0.5 Min |
| 15.0~19.0 |
3.0~10.0 |
13 Min |
0.5 Min |
| 15.0~19.0 |
3.0~10.0 |
12 Min |
0.5 Min |
| 1.3 |
33.0 |
14.0~19.0 |
3.0~8.0 |
7 Min |
1.0 Min |
| 15.0~21.0 |
4.0~11.0 |
10 Min |
1.0 Min |
| 15.0~22.0 |
4.0~11.0 |
10 Min |
1.0 Min |
| 18.0~28.0 |
3.0~10.0 |
15 Min |
1.0 Min |
| 18.0~26.0 |
4.0~11.0 |
13 Min |
1.0 Min |
| 18.0~26.0 |
4.0~11.0 |
13 Min |
1.0 Min |
| 1.5 |
38.0 |
18.0~28.0 |
3.0~10.0 |
9 Min |
1.0 Min |
| 20.0~30.0 |
5.0~11.0 |
12Min |
1.0 Min |
| 20.0~30.0 |
5.0~11.0 |
12 Min |
1.0 Min |
| 25.0~35.0 |
4.0~10.0 |
18 Min |
1.0 Min |
| 24.0~35.0 |
5.0~11.0 |
15 Min |
1.0 Min |
| 24.0~35.0 |
5.0~11.0 |
15 Min |
1.0 Min |
| 2.0 |
50.0 |
30.0~45.0 |
3.0~12.0 |
- |
- |
| 35.0~45.0 |
6.0~15.0 |
24 Min |
1.0 Min |
| 35.0~47.0 |
6.0~15.0 |
24 Min |
1.0 Min |
| 40.0~52.0 |
5.0~15.0 |
- |
- |
| 40.0~50.0 |
5.0~15.0 |
- |
- |
| 40.0~50.0 |
5.0~15.0 |
- |
- |
| Besides the above specifications, we are
available to supply other types, upon customer's request. |
|
