 High-Purity
metal 每 Ga > 99.9999% |
 |
|
For wafer doping process and epi growth. We are available to
supply many kinds of custom-made form according to different
demand ( ex. jar, lump, ＃.etc. ). The details are as shown follows |
Element |
Result(ppb) |
Element |
Result(ppb) |
Element |
Result(ppb) |
Li |
0.2 |
Cr |
0.4 |
In |
1 |
Be |
0.2 |
Mn |
0.2 |
Sn |
5 |
B |
0.6 |
Fe |
1.5 |
Sb |
1 |
Na |
0.3 |
Co |
0.1 |
Te |
1.5 |
Mg |
0.2 |
Ni |
0.3 |
Ba |
3 |
Al |
0.3 |
Cu |
1 |
La |
0.5 |
Si |
1.5 |
Zn |
1.5 |
W |
0.6 |
P |
0.5 |
Ge |
25 |
Pt |
1 |
S |
1.8 |
As |
2 |
Au |
5 |
Cl |
2 |
Se |
6 |
Hg |
5 |
K |
5 |
Sr |
2 |
Tl |
0.5 |
Ca |
8 |
Zr |
0.5 |
Pb |
0.8 |
Sc |
0.06 |
Mo |
0.7 |
Bi |
1 |
Ti |
0.1 |
Ag |
50 |
Th |
0.1 |
V |
0.08 |
Cd |
7 |
U |
0.1 |
|
| High-Purity
metal 每 Ag > 99.99% |
|
| For
semiconductor thin-film process. We are available to supply
many kinds of custom-made form according to different demand
( ex. slug, target, ＃.etc. ). The details are as shown follows
每 |
Element
|
Result(ppm) |
Al |
<10 |
Cr |
<6 |
Cu |
<12 |
Fe |
<11 |
Si |
<2 |
|
| High-Purity
metal 每 Al > 99.999% |
|
| For
semiconductor thin-film process. We are available to supply
many kinds of custom-made form according to different demand
( ex. slug, target, ＃.etc. ). The details are as shown follows
每 |
Element
|
Result(ppm) |
Element |
Result(ppm) |
Cu |
<0.5 |
Si |
<0.4 |
Fe |
<0.6 |
Ti |
<0.3 |
Ga |
<0.4 |
V |
<0.6 |
Mg |
<0.6 |
Zn |
<0.6 |
Mn |
<0.3 |
|
|
|
| High-Purity
metal 每 Ti > 99.995% |
|
| For
semiconductor thin-film process. We are available to supply
many kinds of custom-made form according to different demand
( ex. slug, target, ＃.etc. ). The details are as shown follows
每 |
Element
|
Result(ppm) |
Element |
Result(ppm) |
Al |
3.5 |
Nb |
< 2 |
Ca |
<1 |
Ni |
5.4 |
Cd |
<1 |
Si |
4.2 |
Cr |
5.5 |
V |
2.1 |
Fe |
8.7 |
Zr |
5 |
Hg |
< 1 |
|
|
|
| GaP
wafer |
|
| For
producing LED substrate. Brief specification as shown follows
-- |
| Type |
N |
| Dopant |
S |
| Orientation |
(111) +/-
0.5∼ |
|
|
TOP |
BOTTOM |
| Carrier
Concentration (1/cm-3)
|
3.75 x 1017 |
5.94 x 1017 |
| Hall Mobility (cm2/V.sec.) |
123 |
120 |
| Dislocation Density
(1/cm2) |
1.67 x 105 |
1.88 x 105 |
| Diameter |
49.0 ~ 53.0 mm |
|
| Thickness |
285 +/- 15 um |
|
|
| GaAs
wafer |
|
| For
producing LED substrate. |
| Comparison
sheet for three kinds of wafer growthing method |
| |
VGF |
LEC |
HB |
| Wafer Size |
2"~6" |
3"~6" |
~2.5" |
| Etch Density
|
Very low
|
High |
Low |
| Residual Strain |
Very low
|
High |
Low |
| Carbon Control |
Good |
Good
|
-
|
| Stoichiometry / EL2
Control |
Good |
Moderate |
Poor |
|
| GaAs
wafer specification (Semi-conducting
& Semi-Insulating) |
| Semi-conducting GaAs
wafers |
| Parameter |
Unit |
Diameter |
| 2" |
3" |
100mm |
| Growth Method |
|
VGF |
VGF |
VGF |
| Dopant
|
|
Si |
Si |
Si |
| Conductivity type |
|
N |
N |
N |
| Carrier Concentration |
/cm3 |
(0.1~4) x 1018 |
(0.1~4) x 1018 |
(0.1~4) x 1018 |
| Resistivity |
次-cm |
(15~1) x 10-3 |
(15~1) x 10-3 |
(15~1) x 10-3 |
| Mobility |
cm2/Vs |
(3.5~1.5) x 103
|
(3.5~1.5) x 103
|
(3.5~1.5) x 103
|
| Etch Pit Density |
/cm2
|
<500 |
<500 |
<500 |
| Diameter |
mm |
50.8 +/- 0.5 |
76.2 +/- 0.5 |
100 +/- 0.5 |
| Thickness |
um |
(240~400) +/- 25 |
(300~625) +/- 25 |
625 +/- 25 |
| Orientation ﹛ |
|
(100) +/- 0.5∼ |
(100) +/- 0.5∼ |
(100) +/- 0.5∼ |
| Off Orientation ﹛ |
|
Upon Request |
| Major flat length |
mm |
16 +/- 15 |
22.2 +/- 1.5 |
32 +/- 1.5 |
| Minor flat length |
mm |
7 +/- 1.5 |
11.2 +/- 1.5 |
18 +/- 1.5 |
| TTV |
um |
5 |
5 |
5 |
| TIR |
um |
5 |
5 |
5 |
| Bow |
um |
5 |
5 |
5 |
| Warp |
um |
5 |
5 |
5 |
| Polished surface |
|
P/P, P/E,
As-cut |
|
| Semi-Insulating GaAs
wafers |
| Parameter |
Unit |
Diameter |
| 2" |
3" |
100mm |
| Growth Method |
|
VGF |
VGF |
VGF |
| Dopant
|
|
C or Undoped |
C or Undoped |
C or Undoped |
| Carrier Concentration |
/cm3 |
N/A |
N/A |
N/A |
| Resistivity |
次-cm |
>1 x 107 |
>1 x 107 |
>1 x 107 |
| Mobility |
cm2/Vs |
>6000 |
>6000 |
>6000 |
| Etch Pit Density |
/cm2 |
<5000 |
<5000 |
<5000 |
| Diameter |
mm |
50.8 +/- 0.5 |
76.2 +/- 0.5 |
100 +/- 0.5 |
| Thickness |
um |
(300~450) +/- 25 |
(350~625) +/- 25 |
625 +/- 25 |
| Orientation ﹛ |
|
(100) +/- 0.5∼ |
(100) +/- 0.5∼ |
(100) +/- 0.5∼ |
| Off Orientation ﹛ |
|
Upon Request |
| Major flat length |
mm |
16 +/- 15 |
22.2 +/- 1.5 |
32 +/- 1.5 |
| Minor flat length |
mm |
7 +/- 1.5 |
11.2 +/- 1.5 |
18 +/- 1.5 |
| TTV |
um |
3 |
4 |
4 |
| TIR |
um |
3 |
4 |
4 |
| Bow |
um |
2 |
3 |
3 |
| Warp |
um |
4 |
3 |
3 |
| Polished surface |
|
P/P, P/E,
As-cut |
|
| Al2O3
wafer ( Sapphire ) |
|
| For
producing LED substrate. Brief specification as shown follows
-- |
| Material |
Al2O3 |
| Diameter |
50.8 +/- 0.25 mm |
| Thickness |
330 +/- 25 um |
| 430 +/- 25 um |
| Orientation |
C-axis (0001) +/- 0.3∼ |
| Orientation Flat |
A-axis (1120) +/- 0.5∼ |
| Surface |
Epi-Ready Polished |
| TTV |
< 10 um |
| BOW |
< 10 um |
|
| Au
Bonding Wire |
|
| For
packaging & wiring. Brief specification as shown follows
每 |
| DIA |
Property at Room Temp |
Property at High Temp |
| MIL |
um |
Breaking
Load(gr) |
Elongation(%) |
Breaking
Load(gr) |
Elongation(%) |
| 0.8 |
20.0 |
4.0~8.0
|
2.0~6.0
|
2
Min |
0.5
Min |
| 6.0~10.0 |
2.0~7.0 |
4
Min |
0.5
Min |
| 6.0~10.0 |
3.0~7.0 |
4
Min |
0.5
Min |
| 7.0~11.0 |
2.0~7.0 |
5
Min |
0.5
Min |
| 6.0~10.0 |
3.0~7.0 |
5
Min |
0.5
Min |
| 6.0~10.0 |
3.0~7.0 |
5
Min |
0.5
Min |
| 0.9 |
23.0 |
5.0~10.0 |
2.0~6.0 |
3 Min |
0.5 Min |
7.0~11.0 |
3.0~7.0 |
5 Min |
0.5 Min |
7.0~11.0 |
3.0~7.0 |
5 Min |
0.5 Min |
7.0~12.0 |
2.0~7.0 |
6 Min |
0.5 Min |
8.0~11.0 |
3.0~7.0 |
6 Min |
0.5 Min |
8.0~11.0 |
3.0~7.0 |
6 Min |
0.5 Min |
| 1.0 |
25.0 |
8.0~12.0 |
2.0~6.0 |
4 Min |
0.5 Min |
| 9.0~13.0 |
3.0~8.0 |
6 Min |
0.5 Min |
9.0~13.0 |
3.0~8.0 |
6 Min |
0.5 Min |
10.0~15.0 |
3.0~8.0 |
8 Min |
0.5 Min |
10.0~14.0 |
3.0~8.0 |
8 Min |
0.5 Min |
10.0~14.0 |
3.0~8.0 |
8 Min |
0.5 Min |
| 1.2 |
30.0 |
12.0~16.0 |
3.0~8.0 |
6 Min |
0.5 Min |
14.0~18.0 |
4.0~10.0 |
8 Min |
0.5 Min |
14.0~18.0 |
4.0~10.0 |
8 Min |
0.5 Min |
15.0~19.0 |
3.0~9.0 |
13 Min |
0.5 Min |
15.0~19.0 |
3.0~10.0 |
13 Min |
0.5 Min |
15.0~19.0 |
3.0~10.0 |
12 Min |
0.5 Min |
| 1.3 |
33.0 |
14.0~19.0 |
3.0~8.0 |
7 Min |
1.0 Min |
15.0~21.0 |
4.0~11.0 |
10 Min |
1.0 Min |
15.0~22.0 |
4.0~11.0 |
10 Min |
1.0 Min |
18.0~28.0 |
3.0~10.0 |
15 Min |
1.0 Min |
18.0~26.0 |
4.0~11.0 |
13 Min |
1.0 Min |
| 18.0~26.0 |
4.0~11.0 |
13 Min |
1.0 Min |
| 1.5 |
38.0 |
18.0~28.0 |
3.0~10.0 |
9 Min |
1.0 Min |
20.0~30.0 |
5.0~11.0 |
12Min |
1.0 Min |
20.0~30.0 |
5.0~11.0 |
12 Min |
1.0 Min |
25.0~35.0 |
4.0~10.0 |
18 Min |
1.0 Min |
24.0~35.0 |
5.0~11.0 |
15 Min |
1.0 Min |
24.0~35.0 |
5.0~11.0 |
15 Min |
1.0 Min |
| 2.0 |
50.0 |
30.0~45.0 |
3.0~12.0 |
- |
- |
35.0~45.0 |
6.0~15.0 |
24 Min |
1.0 Min |
35.0~47.0 |
6.0~15.0 |
24 Min |
1.0 Min |
40.0~52.0 |
5.0~15.0 |
- |
- |
40.0~50.0 |
5.0~15.0 |
- |
- |
40.0~50.0 |
5.0~15.0 |
- |
- |
|
Besides the above specifications, we
are available to supply other types, upon customer's
request. |
|
